mbr735 - mbr7150 to-220ac .412(10.5) max .185(4.70) .175(4.44) .055(1.40) .045(1.14) .27(6.86) .23(5.84) .11(2.79) .10(2.54) .025(0.64) .014(0.35) .154(3.91) .148(3.74) dia pin1 2 .113(2.87) .103(2.62) .16(4.06) .14(3.56) .037(0.94) .027(0.68) .205(5.20) .195(4.95) .594(15.1) .587(14.9) .56(14.22) .53(13.46) pin 1 pin 2 case features plastic material used carries underwriters laboratory classifications 94v-0 metal silicon rectifier, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case mechanical data cases: jedec to-220ac molded plastic body terminals: pure tin plated, lead free. solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams maximum ratings and electrical characteristics rating at 25 o c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbr 735 mbr 745 mbr 750 mbr 760 mbr 790 mbr 7100 mbr 7150 units maximum recurrent peak reverse voltage v rrm 35 45 50 60 90 100 150 v maximum rms voltage v rms 24 31 35 42 63 70 105 v maximum dc blocking voltage v dc 35 45 50 60 90 100 150 v maximum average forward rectified current see fig. 1 i (av) 7.5 a peak repetitive forward current (square wave, 20khz) at tc=105 o c i frm 15.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 150 a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a maximum instantaneous forward voltage at (note 2) i f =7.5a,tc=25 i f =7.5a,tc=125 i f =15a,tc=25 i f =15a,tc=125 v f 0.57 0.84 0.72 0.75 0.65 0.92 0.82 0.95 0..92 v maximum instantaneous reverse current @ tc =25 o c at rated dc blocking voltage (note 1) @ tc=125 o c i r 0.1 15.0 0.1 10 0.1 5.0 ma ma voltage rate of change (rated v r ) dv/dt 10,000 v/us typical junction capactance cj 360 280 200 160 pf maximum thermal resistance, (note 3) r jc r ja 5.0 15.0 o c/w operating junction temperature range t j -65 to +150 o c storage temperature range t stg -65 to +175 o c notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. mounted on heatsink size of 2 in x 3 in x 0.25 in al-plated. www.kersemi.com
fig.1 - fo r w ar d curren t der a tin g cu r ve r o f e g a r e v a t n e r r u c d r a w ) a ( . 0 0 5 1 0 0 1 0 5 0 2 4 6 8 10 cas e temper a ture . ( c) o resistive or inductive load fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 10 100 25 50 75 125 100 150 175 number of cycles at 60hz tj=tj max. 8.3ms single half sine wave jedec method fig.3- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) pulse width=300 s 1% duty cycle tj=25 c 0 tj=125 c 0 mbr735-mbr745 mbr750-mbr760 mbr790-mbr7150 fig.4- typical reverse characteristics instantaneous reverse current .(ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 mbr735-mbr745 mbr750-mbr7150 tj=125 c 0 tj=25 c 0 tj=75 c 0 fig.6- typical transient thermal characteristics transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1.0 10 100 40 100 1,000 4,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 mbr735-mbr745 mbr750-mbr7150 mbr735-mbr745 mbr750 & mbr760 mbr790-mbr7150 www.kersemi.com
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